IndiumV3, Main, Repository, bibRecord, 000B67

IGZO TFT-Based All-Enhancement Operational Amplifier Bent to a Radius of 5 mm

Identifieur interne : 000B67 ( Main/Repository ); précédent : 000B66; suivant : 000B68

IGZO TFT-Based All-Enhancement Operational Amplifier Bent to a Radius of 5 mm

Auteurs : RBID : Pascal:13-0357376

Descripteurs français

Pascal (Inist)
- Transistor couche mince, Amplificateur opérationnel, Matériau amorphe, Boucle ouverte, Gain, Taux réjection mode commun, Flexibilité, Consommation électricité, Circuit analogique, Circuit intégré couche mince, Semiconducteur type n, Oxyde d'indium, Oxyde de gallium, Oxyde de zinc, Structure flexible, Imide polymère.
Wicri :
- concept : Matériau amorphe.

English descriptors

KwdEn :
- Amorphous material, Analog circuit, Common mode rejection rate, Electric power consumption, Flexibility, Flexible structure, Gain, Gallium oxide, Indium oxide, Open loop, Operational amplifier, Polyimide, Thin film circuit, Thin film transistor, Zinc oxide, n type semiconductor.

Abstract

An all-enhancement operational amplifier operating at 5 V and comprising 16 n-type amorphous indium-gallium- zinc-oxide thin-film transistors (TFTs) is fabricated on a 50 μm thick flexible polyimide substrate. The operational amplifier has an open loop voltage gain of 18.7 dB and a unity-gain frequency of 472 kHz while the common-mode rejection ratio (CMMR) is larger than 40 dB. The mechanical flexibility of the amplifier is demonstrated by bending the circuit to a radius of 5 mm, which corresponds to a tensile strain of 0.5% parallel to the TFT channels. The bent amplifier shows the same output behavior as when flat. The power consumption of the operational amplifier is 900 μW, regardless whether the circuit is flat or bent.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 000476

Links to Exploration step

Pascal:13-0357376

Le document en format XML

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<author><name sortKey="Zysset, Christoph" uniqKey="Zysset C">Christoph Zysset</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute for Electronics, Swiss Federal Institute of Technology Zürich</s1>
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<author><name sortKey="M Nzenrieder, Niko" uniqKey="M Nzenrieder N">Niko M Nzenrieder</name>
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<author><name sortKey="Petti, Luisa" uniqKey="Petti L">Luisa Petti</name>
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<author><name sortKey="B The, Lars" uniqKey="B The L">Lars B The</name>
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<author><name sortKey="Salvatore, Giovanni A" uniqKey="Salvatore G">Giovanni A. Salvatore</name>
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<author><name sortKey="Troster, Gerhard" uniqKey="Troster G">Gerhard Tröster</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute for Electronics, Swiss Federal Institute of Technology Zürich</s1>
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<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0357376 INIST</idno>
<idno type="RBID">Pascal:13-0357376</idno>
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<seriesStmt><idno type="ISSN">0741-3106</idno>
<title level="j" type="abbreviated">IEEE electron device lett.</title>
<title level="j" type="main">IEEE electron device letters</title>
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</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Amorphous material</term>
<term>Analog circuit</term>
<term>Common mode rejection rate</term>
<term>Electric power consumption</term>
<term>Flexibility</term>
<term>Flexible structure</term>
<term>Gain</term>
<term>Gallium oxide</term>
<term>Indium oxide</term>
<term>Open loop</term>
<term>Operational amplifier</term>
<term>Polyimide</term>
<term>Thin film circuit</term>
<term>Thin film transistor</term>
<term>Zinc oxide</term>
<term>n type semiconductor</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Transistor couche mince</term>
<term>Amplificateur opérationnel</term>
<term>Matériau amorphe</term>
<term>Boucle ouverte</term>
<term>Gain</term>
<term>Taux réjection mode commun</term>
<term>Flexibilité</term>
<term>Consommation électricité</term>
<term>Circuit analogique</term>
<term>Circuit intégré couche mince</term>
<term>Semiconducteur type n</term>
<term>Oxyde d'indium</term>
<term>Oxyde de gallium</term>
<term>Oxyde de zinc</term>
<term>Structure flexible</term>
<term>Imide polymère</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Matériau amorphe</term>
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<front><div type="abstract" xml:lang="en">An all-enhancement operational amplifier operating at 5 V and comprising 16 n-type amorphous indium-gallium- zinc-oxide thin-film transistors (TFTs) is fabricated on a 50 μm thick flexible polyimide substrate. The operational amplifier has an open loop voltage gain of 18.7 dB and a unity-gain frequency of 472 kHz while the common-mode rejection ratio (CMMR) is larger than 40 dB. The mechanical flexibility of the amplifier is demonstrated by bending the circuit to a radius of 5 mm, which corresponds to a tensile strain of 0.5% parallel to the TFT channels. The bent amplifier shows the same output behavior as when flat. The power consumption of the operational amplifier is 900 μW, regardless whether the circuit is flat or bent.</div>
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<fA06><s2>11</s2>
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<fA08 i1="01" i2="1" l="ENG"><s1>IGZO TFT-Based All-Enhancement Operational Amplifier Bent to a Radius of 5 mm</s1>
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<fA11 i1="01" i2="1"><s1>ZYSSET (Christoph)</s1>
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<fA11 i1="02" i2="1"><s1>MÜNZENRIEDER (Niko)</s1>
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<fA11 i1="03" i2="1"><s1>PETTI (Luisa)</s1>
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<fA11 i1="04" i2="1"><s1>BÜTHE (Lars)</s1>
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<fA11 i1="05" i2="1"><s1>SALVATORE (Giovanni A.)</s1>
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<fA11 i1="06" i2="1"><s1>TRÖSTER (Gerhard)</s1>
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<fA14 i1="01"><s1>Institute for Electronics, Swiss Federal Institute of Technology Zürich</s1>
<s2>Zürich 8092</s2>
<s3>CHE</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>An all-enhancement operational amplifier operating at 5 V and comprising 16 n-type amorphous indium-gallium- zinc-oxide thin-film transistors (TFTs) is fabricated on a 50 μm thick flexible polyimide substrate. The operational amplifier has an open loop voltage gain of 18.7 dB and a unity-gain frequency of 472 kHz while the common-mode rejection ratio (CMMR) is larger than 40 dB. The mechanical flexibility of the amplifier is demonstrated by bending the circuit to a radius of 5 mm, which corresponds to a tensile strain of 0.5% parallel to the TFT channels. The bent amplifier shows the same output behavior as when flat. The power consumption of the operational amplifier is 900 μW, regardless whether the circuit is flat or bent.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03F04</s0>
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<fC02 i1="02" i2="X"><s0>001D03G02A2</s0>
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<s5>02</s5>
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<s5>02</s5>
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<s5>02</s5>
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<s5>03</s5>
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<s5>03</s5>
</fC03>
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<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Boucle ouverte</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Open loop</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Bucle abierto</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Gain</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Gain</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Ganancia</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Taux réjection mode commun</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Common mode rejection rate</s0>
<s5>06</s5>
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<s5>06</s5>
</fC03>
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<s5>07</s5>
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<fC03 i1="07" i2="X" l="ENG"><s0>Flexibility</s0>
<s5>07</s5>
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<fC03 i1="07" i2="X" l="SPA"><s0>Flexibilidad</s0>
<s5>07</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>09</s5>
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<s5>09</s5>
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<s5>09</s5>
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<s5>10</s5>
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<fC03 i1="10" i2="X" l="ENG"><s0>Thin film circuit</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Circuito integrado capa delgada</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Semiconducteur type n</s0>
<s5>22</s5>
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<fC03 i1="11" i2="X" l="ENG"><s0>n type semiconductor</s0>
<s5>22</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Semiconductor tipo n</s0>
<s5>22</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>23</s5>
</fC03>
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<s5>23</s5>
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<s5>23</s5>
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<s5>24</s5>
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<fC03 i1="13" i2="X" l="ENG"><s0>Gallium oxide</s0>
<s5>24</s5>
</fC03>
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<s5>24</s5>
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<s5>25</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Zinc oxide</s0>
<s5>25</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Zinc óxido</s0>
<s5>25</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Structure flexible</s0>
<s5>26</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Flexible structure</s0>
<s5>26</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Estructura flexible</s0>
<s5>26</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Imide polymère</s0>
<s2>NK</s2>
<s5>27</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Polyimide</s0>
<s2>NK</s2>
<s5>27</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Imida polímero</s0>
<s2>NK</s2>
<s5>27</s5>
</fC03>
<fN21><s1>336</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
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</record>

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   |type=    RBID
   |clé=     Pascal:13-0357376
   |texte=   IGZO TFT-Based All-Enhancement Operational Amplifier Bent to a Radius of 5 mm
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IGZO TFT-Based All-Enhancement Operational Amplifier Bent to a Radius of 5 mm

IGZO TFT-Based All-Enhancement Operational Amplifier Bent to a Radius of 5 mm

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri